advanced power p-channel enhancement mode electronics corp. power mosfet low gate charge bv dss -30v simple drive requirement r ds(on) 50m fast switching characteristic i d - 20a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 10 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice maximum thermal resistance, junction-ambient (pcb mount) 3 201009306 1 ap9435gh/j-hf rating halogen-free product 12.5 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current - 30 + 20 - 20 0.1 continuous drain current -13 pulsed drain current 1 -60 total power dissipation operating junction temperature range linear derating factor storage temperature range -55 to 150 thermal data parameter advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. the to-252/to-251 package is widely used for commercial-industrial application. g d s g d s to-252(h) g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-10a - - 50 m ? v gs =-4.5v, i d =-5a - - 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-10a - 10 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =125 o c) v ds =-24v, v gs =0v - - -250 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =-10a - 8 16 nc q gs gate-source charge v ds =-24v - 1.6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.3 - nc t d(on) turn-on delay time 2 v ds =-15v - 6.3 - ns t r rise time i d =-10a - 46 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 20 - ns t f fall time r d =1.5 - 7.4 - ns c iss input capacitance v gs =0v - 570 740 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-5a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-10a, v gs =0v, - 18 - ns q rr reverse recovery charge di/dt=-100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board 2 ap9435gh/j-hf
a p9435gh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 0246810 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c v g =-4.0v -4.5v -10v -8.0v -6.0v 0 10 20 30 40 50 60 70 02468 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c v g =-4.0v -4.5v -6.0v -10v -8.0v 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 30 40 50 60 70 80 90 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-10a t c =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -10a v g =-10v
ap9435gh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 10 100 1000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z ciss coss crss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 10 12 048121620 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-10a v ds =-24v
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